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| SML20W65 TO-267 Package Outline. Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 200V 65A ID(cont) RDS(on) 0.026 * Faster Switching * Lower Leakage * TO-267 Hermetic Package D StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. G S ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain - Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1 3 Gate - Source Voltage Gate - Source Voltage Transient Total Power Dissipation @ Tcase = 25C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063" from Case for 10 Sec. Avalanche Current 1 3 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25C, L = 1.18mH, RG = 25, Peak IL = 65A 3) Maximum current limited by package. 200 65 260 30 40 400 3.2 -55 to 150 300 65 50 2500 V A A V W W/C C A mJ Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 6/99 SML20W65 STATIC ELECTRICAL RATINGS (Tcase = 25C unless otherwise stated) BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V) Gate - Source Leakage Current Gate Threshold Voltage On State Drain Current 2 4 Drain - Source On State Resistance 2 Test Conditions VGS = 0V , ID = 250A VDS = VDSS VDS = 0.8VDSS , TC = 125C VGS = 30V , VDS = 0V VDS = VGS , ID = 2.5mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 Min. Min. 2 65 0.026 Min. 200 Typ. Max. Unit V 65 250 100 4 A nA V A DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate - Source Charge Gate - Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Typ. Max. Unit 8500 10200 1950 560 290 66 120 16 25 48 5 2730 840 435 100 180 32 50 72 10 ns nC pF SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic IS ISM VSD trr Qrr Test Conditions Continuous Source Current4 (Body Diode) Pulsed Source Current1 4 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge (Body Diode) VGS = 0V , IS = - ID [Cont.] IS = - ID [Cont.] , dls / dt = 100A/s IS = - ID [Cont.] , dls / dt = 100A/s Min. 330 5.8 Typ. Max. Unit 65 A 260 1.7 V ns C THERMAL CHARACTERISTICS RJC RJA Characteristic Junction to Case Junction to Ambient Typ. Max. Unit 0.31 C/W 40 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380S , Duty Cycle < 2% 3) See MIL-STD-750 Method 3471 4) Maximum current limited by package. CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 6/99 |
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